Metal Impurities in Silicon-Device Fabrication by Klaus Graff.

Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of mai...

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Bibliographic Details
Main Author:	Graff, Klaus (Author)
Corporate Author:	SpringerLink (Online service)
Format:	eBook
Language:	English
Published:	Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 1995.
Edition:	1st ed. 1995.
Series:	Springer Series in Materials Science, 24 Springer eBook Collection.
Subjects:	Materials—Surfaces. Thin films. Electronics. Microelectronics. Inorganic chemistry. Electronic resources (E-books)
Online Access:	Click to view e-book
Holy Cross Note:	Loaded electronically. Electronic access restricted to members of the Holy Cross Community.

Table of Contents:

1. Introduction
2. Common Properties of Transition Metals
2.1 General Behavior
2.2 Contamination of Silicon Wafers
2.3 Impact on Device Performance
3. Properties of Transition Metals in Silicon
3.1 Solubilities
3.2 Diffusivities
3.3 Dissolved Impurities
3.4 Precipitated Metals
4. Properties of the Main Impurities
4.1 Iron
4.2 Nickel
4.3 Copper
4.4 Molybdenum
4.5 Palladium
4.6 Platinum
4.7 Gold
5. Properties of Rare Impurities
5.1 Scandium
5.2 Titanium
5.3 Vanadium
5.4 Chromium
5.5 Manganese
5.6 Cobalt
5.7 Zinc
5.8 Rhodium
5.9 Silver
5.10 Tantalum
5.11 Tungsten
5.12 Mercury
6. Detection Methods
6.1 Detection of Total Impurity Content
6.2 Detection of Dissolved Impurities
6.3 Detection of Precipitates
7. Requirements of Modern Technology
7.1 Reduction of Contamination
8. Gettering of Impurities
8.1 Gettering Mechanisms
8.2 Control of Gettering Efficiency
9. Conclusion and Future Trends
References.

Metal Impurities in Silicon-Device Fabrication by Klaus Graff.

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