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00000nam a22000005i 4500 |
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b3195636 |
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MWH |
| 005 |
20191021171453.0 |
| 007 |
cr nn 008mamaa |
| 008 |
111121s1996 gw | s |||| 0|eng d |
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|a 9783642795763
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|a 10.1007/978-3-642-79576-3
|2 doi
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|a (DE-He213)978-3-642-79576-3
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|a E-Book
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|a PHJ
|2 bicssc
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|a SCI053000
|2 bisacsh
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|a PHJ
|2 thema
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|a TTB
|2 thema
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| 100 |
1 |
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|a Iga, Kenichi.
|e author.
|4 aut
|4 http://id.loc.gov/vocabulary/relators/aut
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| 245 |
1 |
0 |
|a Process Technology for Semiconductor Lasers
|h [electronic resource] :
|b Crystal Growth and Microprocesses /
|c by Kenichi Iga, Susumu Kinoshita.
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| 250 |
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|a 1st ed. 1996.
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| 264 |
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1 |
|a Berlin, Heidelberg :
|b Springer Berlin Heidelberg :
|b Imprint: Springer,
|c 1996.
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| 300 |
|
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|a X, 169 p.
|b online resource.
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| 336 |
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|a text
|b txt
|2 rdacontent
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| 337 |
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|a computer
|b c
|2 rdamedia
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| 338 |
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|a online resource
|b cr
|2 rdacarrier
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| 347 |
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|a text file
|b PDF
|2 rda
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| 490 |
1 |
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|a Springer Series in Materials Science,
|x 0933-033X ;
|v 30
|
| 490 |
1 |
|
|a Springer eBook Collection
|
| 505 |
0 |
|
|a 1. Introduction -- 1.1 Outline of Semiconductor Laser Theory -- 1.2 Semiconductor Lasers in Opto-electronics -- 1.3 Necessary Technology for Semiconductor Lasers -- 1.4 Brief History of Semiconductor Lasers -- 1.5 Typical Semiconductor Lasers -- 2. Materials for Semiconductor Lasers -- 2.1 III-V Compound Semiconductors -- 2.2 Crystals for Visible to Near-Infrared-Wavelength Emission Semiconductor Lasers -- 2.3 Crystals for Semiconductor Lasers with 1-µm and Longer Emission Wavelengths -- 3. Basic Design of Semiconductor Lasers -- 3.1 Double Heterostructures and Their Design -- 4. Epitaxy of III–V Compound Semiconductors -- 4.1 III-V Substrates for Semiconductor Lasers -- 4.2 Bulk Growth Techniques -- 4.3 Heteroepitaxial Techniques -- 5. Liquid Phase Epitaxy and Growth Technology -- 5.1 Outline of an LPE System -- 5.2 Reactors -- 5.3 Loading Sub-System -- 5.4 Pump and Exhaust Sub-System -- 5.5 Gas-Flow Sub-System -- 5.6 Heating Sub-System -- 5.7 Maintenance -- 5.8 Liquid-Phase Epitaxy -- 5.9 LPE Process -- 6. Vapor Phase and Beam Epitaxies -- 6.1 Metal-Organic Chemical Vapor Deposition (MOCVD) -- 6.2 Molecular-Beam and Chemical-Beam Epitaxy -- 7. Characterization of Laser Materials -- 7.1 Evaluation of Laser Wafers -- 7.2 Measurement of Lattice Mismatch -- 7.3 Measurement of the Impurity Concentration -- 7.4 Photoluminescence -- 7.5 Measurement of the Refractive Index -- 7.6 Misfit Dislocation -- 8. Semiconductor-Laser Devices — Fabrication and Characteristics -- 8.1 Fabrication of Fundamental Laser Devices -- 8.2 Current Injection and Contacts -- 8.3 Evaluation of the Threshold-Current Density -- 8.4 Gain Bandwidth and Oscillation Spectra -- 8.5 Output and Efficiency of Semiconductor Lasers -- 8.6 Near-Field Pattern and Far-Field Pattern -- 8.7 Temperature Characteristics -- 8.8 Reliability -- 9. Mode-Control Techniques in Semiconductor Lasers -- 9.1 Transverse-Mode Characteristics and the Single-Mode Condition -- 9.2 Longitudinal-Mode Control -- 9.3 Burying Epitaxy on Mesas and V-Grooves -- 9.4 Mass-Transport Technique -- 9.5 Selective Meltback Technique -- 9.6 Overgrowth on Gratings -- 9.7 Growth of Quantum Wells -- 9.8 Growth of Multilayer Bragg Mirrors -- 10. Surface-Emitting Lasers -- 10.1 The Concept of Surf ace-Emitting Lasers -- 10.2 Structure and Characteristics -- 10.3 Semiconductor Multi-Layer Structure -- 10.4 Two-Dimensional Arrays -- 10.5 Ultralow-Threshold Devices -- 10.6 Future Prospects -- References.
|
| 520 |
|
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|a Process Technology for Semiconductor Lasers describes the design principles of semiconductor lasers, mainly from the fabrication point of view. Starting out with the history of semiconductor-laser development and applications the materials for use in lasing from short to long wavelengths are reviewed. The basic design principles for semiconductor- laser devices and the epitaxy for laser production are discussed. An entire chapter is devoted to the technology of liquid-phase epitaxy, and another one to vapor-phase and beam epitaxies, respectively. The characterizations of laser materials, and the fabrication and characteristics of semiconductor lasers are treated. Mode-control techniques are presented, and surface-emitting lasers are introduced in the final chapter.
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| 590 |
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|a Loaded electronically.
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| 590 |
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|a Electronic access restricted to members of the Holy Cross Community.
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| 650 |
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0 |
|a Lasers.
|
| 650 |
|
0 |
|a Photonics.
|
| 650 |
|
0 |
|a Quantum optics.
|
| 650 |
|
0 |
|a Superconductivity.
|
| 650 |
|
0 |
|a Superconductors.
|
| 650 |
|
0 |
|a Electronics.
|
| 650 |
|
0 |
|a Microelectronics.
|
| 650 |
|
0 |
|a Engineering.
|
| 690 |
|
|
|a Electronic resources (E-books)
|
| 700 |
1 |
|
|a Kinoshita, Susumu.
|e author.
|4 aut
|4 http://id.loc.gov/vocabulary/relators/aut
|
| 710 |
2 |
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|a SpringerLink (Online service)
|
| 773 |
0 |
|
|t Springer eBooks
|
| 830 |
|
0 |
|a Springer Series in Materials Science,
|x 0933-033X ;
|v 30
|
| 830 |
|
0 |
|a Springer eBook Collection.
|
| 856 |
4 |
0 |
|u https://holycross.idm.oclc.org/login?auth=cas&url=https://doi.org/10.1007/978-3-642-79576-3
|3 Click to view e-book
|t 0
|
| 907 |
|
|
|a .b31956361
|b 04-18-22
|c 02-26-20
|
| 998 |
|
|
|a he
|b 02-26-20
|c m
|d @
|e -
|f eng
|g gw
|h 0
|i 1
|
| 912 |
|
|
|a ZDB-2-PHA
|
| 912 |
|
|
|a ZDB-2-BAE
|
| 950 |
|
|
|a Physics and Astronomy (Springer-11651)
|
| 902 |
|
|
|a springer purchased ebooks
|
| 903 |
|
|
|a SEB-COLL
|
| 945 |
|
|
|f - -
|g 1
|h 0
|j - -
|k - -
|l he
|o -
|p $0.00
|q -
|r -
|s b
|t 38
|u 0
|v 0
|w 0
|x 0
|y .i21087994
|z 02-26-20
|
| 999 |
f |
f |
|i 60b1fb81-0923-5bc0-96ad-668593ad267e
|s 8386bbc4-4a5b-570a-b760-e3f583b08846
|t 0
|
| 952 |
f |
f |
|p Online
|a College of the Holy Cross
|b Main Campus
|c E-Resources
|d Online
|t 0
|e E-Book
|h Library of Congress classification
|i Elec File
|