Electron Spin Resonance in Semiconductors by Gordon Lancaster.

Since the study of the solid state began it has been necessary to use increasingly refined experimental techniques, of which electron spin resonance is an important example, in the effort to gain information concerning the structure and properties of an immense and varied range of solids. In the las...

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Bibliographic Details
Main Author: Lancaster, Gordon (Author)
Corporate Author: SpringerLink (Online service)
Format: eBook
Language:English
Published: New York, NY : Springer US : Imprint: Springer, 1966.
Edition:1st ed. 1966.
Series:Monographs on Electron Spin Resonance
Springer eBook Collection.
Subjects:
Online Access:Click to view e-book
Holy Cross Note:Loaded electronically.
Electronic access restricted to members of the Holy Cross Community.
Table of Contents:
  • 1 Energy bands and impurity states in semiconductors
  • 2 Group V impurities in silicon
  • 3 Deep-lying states in silicon
  • 4 Radiation-damaged semiconductors
  • 5 Electron spin resonance in germanium and Group III–V compounds
  • 6 Application of electron spin resonance in semiconductors
  • Appendix: Wannier functions and shallow donor-impurity states.