Technology CAD — Computer Simulation of IC Processes and Devices

Technology CAD — Computer Simulation of IC Processes and Devices by Robert W. Dutton, Zhiping Yu.

129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium .......... . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7...

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Bibliographic Details
Main Authors: Dutton, Robert W. (Author), Zhiping Yu (Author)
Corporate Author: SpringerLink (Online service)
Format: eBook
Language:English
Published: New York, NY : Springer US : Imprint: Springer, 1993.
Edition:1st ed. 1993.
Series:The Springer International Series in Engineering and Computer Science, 243
Springer eBook Collection.
Subjects:
Electronic circuits.
Electrical engineering.
Computer-aided engineering.
Electronic resources (E-books)
Online Access:Click to view e-book
Holy Cross Note:Loaded electronically.
Electronic access restricted to members of the Holy Cross Community.
Table of Contents:
  • 1 Technology-Oriented CAD
  • 1.1 Introduction
  • 1.2 Process and Device CAD
  • 1.3 Process Simulation Techniques
  • 1.4 Interfaces in Process and Device CAD
  • 1.5 CMOS Technology
  • 1.6 Summary
  • 1.7 Exercises
  • 1.8 References
  • 2 Introduction to SUPREM
  • 2.1 Introduction
  • 2.2 Ion Implantation
  • 2.3 Oxidation
  • 2.4 Impurity Diffusion
  • 2.5 Summary
  • 2.6 Exercises
  • 2.7 References
  • 3 Device CAD
  • 3.1 Introduction
  • 3.2 Semiconductor Device Analysis
  • 3.3 Field-Effect Structures
  • 3.4 Bipolar Junction Structures
  • 3.5 Summary
  • 3.6 Exercises
  • 3.7 References
  • 4 PN Junctions
  • 4.1 Introduction
  • 4.2 Carrier Densities: Equilibrium Case
  • 4.3 Non-Equilibrium
  • 4.4 Carrier Transport and Conservation
  • 4.5 The pn Junction — Equilibrium Conditions
  • 4.6 The pn Junction — Non-equilibrium
  • 4.7 SEDAN Analysis
  • 4.8 Summary
  • 4.9 Exercises
  • 4.10 References
  • 5 MOS Structures
  • 5.1 Introduction
  • 5.2 The MOS Capacitor
  • 5.3 Basic MOSFET I-V Characteristics
  • 5.4 Threshold Voltage in Nonuniform Substrate
  • 5.5 MOS Device Design by Simulation
  • 5.6 Summary
  • 5.7 Exer cises
  • 5.8 References
  • 6 Bipolar Transistors
  • 6.1 Introduction
  • 6.2 Lateral pnp Transistor Operation
  • 6.3 Transport Current Analysis
  • 6.4 Generalized Charge Storage Model
  • 6.5 Transistor Equivalent Circuits
  • 6.6 Second Order Effects
  • 6.7 Transit Time and Cutoff Frequency
  • 6.8 Application of Simulation Tools
  • 6.9 Summary
  • 6.10 Exercises
  • 6.11 References
  • 7 BiCMOS Technology
  • 7.1 Introduction
  • 7.2 Triple-Diffused BiCMOS
  • 7.3 Buried-Epitaxial Layer BiCMOS
  • 7.4 Summary
  • 7.5 Exercises
  • 7.6 References
  • A Numerical Analyis
  • B BiCMOS Technology Overview
  • C Templates for PISCES Simulation.

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