Ferroelectric Memories

Ferroelectric Memories by James F. Scott.

Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied...

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Bibliographic Details
Main Author: Scott, James F. (Author)
Corporate Author: SpringerLink (Online service)
Format: eBook
Language:English
Published: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2000.
Edition:1st ed. 2000.
Series:Springer Series in Advanced Microelectronics, 3
Springer eBook Collection.
Subjects:
Electronics.
Microelectronics.
Computer engineering.
Physics.
Metals.
Computer memory systems.
Electronic resources (E-books)
Online Access:Click to view e-book
Holy Cross Note:Loaded electronically.
Electronic access restricted to members of the Holy Cross Community.
Table of Contents:
  • 1. Introduction
  • 2. Basic Properties of RAMs (Random Access Memories)
  • 3. Electrical Breakdown (DRAMs and NV-RAMs)
  • 4. Leakage Currents
  • 5. Capacitance—Voltage Data: C(V)
  • 6. Switching Kinetics
  • 7. Charge Injection and Fatigue
  • 8. Frequency Dependence
  • 9. Phase Sequences in Processing
  • 10. SBT-Family Aurivillius-Phase Layer Structures
  • 11. Deposition and Processing
  • 12. Nondestructive Read-Out Devices
  • 13. Ferroelectrics-on-Superconductor Devices: Phased-Array Radar and 10–100 GHz Devices
  • 14. Wafer Bonding
  • 15. Electron-Emission and Flat-Panel Displays
  • 16. Optical Devices
  • 17. Nanophase Devices
  • 18. Drawbacks and Disadvantages
  • A. Exercises.

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