Thin Film and Depth Profile Analysis

Thin Film and Depth Profile Analysis edited by H. Oechsner.

The characterization of thin films and solid interfaces as well as the determina­ tion of concentration profiles in thin solid layers is one of the fields which re­ quire a rapid transfer of the results from basic research to technological applica­ tions and developments. It is the merit of the Dr....

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Bibliographic Details
Corporate Author: SpringerLink (Online service)
Other Authors: Oechsner, H. (Editor)
Format: eBook
Language:English
Published: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 1984.
Edition:1st ed. 1984.
Series:Topics in Current Physics, 37
Springer eBook Collection.
Subjects:
Materials—Surfaces.
Thin films.
Solid state physics.
Spectroscopy.
Microscopy.
Physical chemistry.
Electronic resources (E-books)
Online Access:Click to view e-book
Holy Cross Note:Loaded electronically.
Electronic access restricted to members of the Holy Cross Community.
Table of Contents:
  • 1. Introduction.
  • 1.1 Requirements for Thin Film and In-Depth Analysis
  • 1.2 Object and Outline of the Book
  • References
  • 2. The Application of Beam and Diffraction Techniques to Thin Film and Surface Micro-Analysis.
  • 2.1 Methods to Determine Chemical Structures in Material Research
  • 2.2 Selected Analytical Features Used to Determine Chemical Structures
  • 2.3 Determining Physical Structures in Material Research
  • 2.4 Application of Different Microanalytical Techniques to Specific Analytical Problems
  • 2.5 Future Prospects
  • References
  • 3. Depth Profile and Interface Analysis of Thin Films by AES and XPS
  • 3.1 Quantification from First Principles
  • 3.2 Initial Transient Layer
  • 3.3 Steady-State Region
  • 3.4 Film-Substrate Interface
  • References
  • 4. Secondary Neutral Mass Spectrometry (SNMS) and Its Application to Depth Profile and Interface Analysis.
  • 4.1 Background
  • 4.2 Experimental Method
  • 4.3 Quantification of SNMS
  • 4.4 Applications of SNMS to Depth Profile Analysis
  • 4.5 Concluding Remarks
  • References
  • 5. In-Situ Laser Measurements of Sputter Rates During SIMS/AES In-Depth Profiling.
  • 5.1 Background
  • 5.2 Principles of Laser Technique
  • 5.3 Experiments
  • 5.4 Results and Discussion
  • 5.5 Conclusion
  • References
  • 6. Physical Limitations to Sputter Profiling at Interfaces — Model Experiments with Ge/Si Using KARMA.
  • 6.1 Background
  • 6.2 Experimental Approach
  • 6.3 Conversion of Raw Sputter Profiles into Depth Profiles
  • 6.4 Depth Profiles of the Ge/Si Interface
  • 6.5 Dose Effects and Preferential Sputtering
  • 6.6 Depth Resolution in Sputter Profiling
  • 6.7 Summary and Outlook
  • References
  • 7. Depth Resolution and Quantitative Evaluation of AES Sputtering Profiles
  • 7.1 Background
  • 7.2 Calibration of the Depth Scale
  • 7.3 Calibration of the Concentration Scale
  • 7.4 Depth Resolution in Sputter Profiling
  • 7.5 Determination of the Resolution function
  • 7.6 Deconvolution Procedures
  • 7.7 Conclusion
  • References
  • 8. The Theory of Recoil Mixing in Solids
  • 8.1 Background
  • 8.2 Review of Recoil Mixing Models
  • 8.3 General Formulation of Atomic Relocation Phenomena
  • 8.4 Solutions to the Specific Mixing Models
  • 8.5 Summary and Outlook
  • 8.6 List of Symbols
  • References
  • Additional References with Titles.

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