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|a 9783709169636
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|a 10.1007/978-3-7091-6963-6
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|a Jacoboni, Carlo.
|e author.
|4 aut
|4 http://id.loc.gov/vocabulary/relators/aut
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| 245 |
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|a The Monte Carlo Method for Semiconductor Device Simulation
|h [electronic resource] /
|c by Carlo Jacoboni, Paolo Lugli.
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| 250 |
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|a 1st ed. 1989.
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| 264 |
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|a Vienna :
|b Springer Vienna :
|b Imprint: Springer,
|c 1989.
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| 300 |
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|a X, 359 p.
|b online resource.
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|a text
|b txt
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| 490 |
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|a Computational Microelectronics,
|x 0179-0307
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|a Springer eBook Collection
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|a 1 Introduction -- References -- 2 Charge Transport in Semiconductors -- 2.1 Electron Dynamics -- 2.2 Energy Bands -- 2.3 Scattering Mechanisms -- 2.4 Scattering Probabilities -- 2.5 Transport Equation -- 2.6 Linear Response and the Relaxation Time Approximation -- 2.7 Diffusion, Noise, and Velocity Autocorrelation Function -- 2.8 Hot Electrons -- 2.9 Transient Transport -- 2.10 The Two-dimensional Electron Gas -- References -- 3 The Monte Carlo Simulation -- 3.1 Fundamentals -- 3.2 Definition of the Physical System -- 3.3 Initial Conditions -- 3.4 The Free Flight, Self Scattering -- 3.5 The Scattering Process -- 3.6 The Choice of the State After Scattering -- 3.7 Collection of Results for Steady-State Phenomena -- 3.8 The Ensemble Monte Carlo (EMC) -- 3.9 Many Particle Effects -- 3.10 Monte Carlo Simulation of the 2DEG -- 3.11 Special Topics -- 3.12 Variance-reducing Techniques -- 3.13 Comparison with Other Techniques -- References -- 4 Review of Semiconductor Devices -- 4.1 Introduction -- 4.2 Historical Evolution of Semiconductor Devices -- 4.3 Physical Basis of Semiconductor Devices -- 4.4 Comparison of Semiconductor Devices -- References -- 5 Monte Carlo Simulation of Semiconductor Devices -- 5.1 Introduction -- 5.2 Geometry of the System -- 5.3 Particle-Mesh Force Calculation -- 5.4 Poisson Solver and Field Distribution -- 5.5 The Monte Carlo Simulation of Semiconductor Devices -- References -- 6 Applications -- 6.1 Introduction -- 6.2 Diodes -- 6.3 MESFET -- 6.4 HEMT and Heterojunction Real Space Transfer Devices -- 6.5 Bipolar Transistor -- 6.6 HBT -- 6.7 MOSFET and MISFET -- 6.8 Hot Electron Transistors -- 6.9 Permeable Base Transistor -- 6.10 Comparison with Traditional Simulators -- References -- Appendix A. Numerical Evaluation of Some Integrals of Interest -- References -- Appendix B. Generation of Random Numbers -- References.
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|a The application of the Monte Carlo method to the simulation of semiconductor devices is presented. A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor devices. The Monte Carlo algorithm is discussed in great details, and specific applications to the modelling of semiconductor devices are given. A comparison with traditional simulators is also presented.
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|a Loaded electronically.
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|a Electronic access restricted to members of the Holy Cross Community.
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|a Electronic circuits.
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|a Electronics.
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| 650 |
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|a Microelectronics.
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| 650 |
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|a Computer simulation.
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| 650 |
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|a Condensed matter.
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| 650 |
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|a Computational intelligence.
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| 690 |
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|a Electronic resources (E-books)
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| 700 |
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|a Lugli, Paolo.
|e author.
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