Hierarchical Device Simulation The Monte-Carlo Perspective

Hierarchical Device Simulation The Monte-Carlo Perspective / by Christoph Jungemann, Bernd Meinerzhagen.

This book summarizes the research of more than a decade. Its early motivation dates back to the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte-Carlo solutions of the Boltzmann transport equation at the NASECODE conferences in Ireland. At that time numerical sem...

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Bibliographic Details
Main Authors: Jungemann, Christoph (Author), Meinerzhagen, Bernd (Author)
Corporate Author: SpringerLink (Online service)
Format: eBook
Language:English
Published: Vienna : Springer Vienna : Imprint: Springer, 2003.
Edition:1st ed. 2003.
Series:Computational Microelectronics,
Springer eBook Collection.
Subjects:
Electronics.
Microelectronics.
Engineering.
Optical materials.
Electronic materials.
Physics.
Statistics .
Electronic resources (E-books)
Online Access:Click to view e-book
Holy Cross Note:Loaded electronically.
Electronic access restricted to members of the Holy Cross Community.
Table of Contents:
  • 1 Introduction
  • References
  • 2 Semiclassical Transport Theory
  • 2.1 The Boltzmann Transport Equation
  • 2.2 Balance Equations
  • 2.3 The Microscopic Relaxation Time
  • 2.4 Fluctuations in the Steady-State 25 References
  • 3 The Monte-Carlo Method
  • 3.1 Basic Monte-Carlo Methods
  • 3.2 The Monte-Carlo Solver of the Boltzmann Equation
  • 3.3 Velocity Autocorrelation Function
  • 3.4 Basic Statistics
  • 3.5 Convergence Estimation
  • References
  • 4 Scattering Mechanisms
  • 4.1 Phonon Scattering
  • 4.2 Alloy Scattering
  • 4.3 Impurity Scattering
  • 4.4 Impact Ionization by Electrons
  • 4.5 Surface Roughness Scattering
  • References
  • 5 Full-Band Structure
  • 5.1 Basic Properties of the Band Structure of Relaxed Silicon
  • 5.2 Basic Properties of the Band Structure of Strained SiGe
  • 5.3 k-Space Grid
  • 5.4 Calculation of the Density of States
  • 5.5 Mass Tensor Evaluation
  • 5.6 Particle Motion in Phase-Space
  • 5.7 Selection of a Final State in k-Space
  • References
  • 6 Device Simulation
  • 6.1 Device Discretization
  • 6.2 Band Edges
  • 6.3 Poisson Equation
  • 6.4 Self-Consistent Device Simulation
  • 6.5 Nonlinear Poisson Equation
  • 6.6 Nonself-Consistent Device Simulation
  • 6.7 Statistical Enhancement
  • 6.8 Terminal Current Estimation
  • 6.9 Contact Resistance
  • 6.10 Normalization of Physical Quantities
  • References
  • 7 Momentum-Based Transport Models
  • 7.1 The Hydrodynamic Model
  • 7.2 Small-Signal Analysis
  • 7.3 Noise Analysis
  • 7.4 The Drift-Diffusion Model
  • 7.5 Transport and Noise Parameter Simulation
  • References
  • 8 Stochastic Properties of Monte-Carlo Device Simulations
  • 8.1 Stochastic Error
  • 8.2 In-Advance CPU Time Estimation
  • References
  • 9 Results
  • 9.1 N+NN+ and P+PP+ Structures
  • 9.2 MOSFETs
  • 9.3 SiGe HBTs
  • References.

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