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121227s1976 xxu| s |||| 0|eng d |
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|a 9781461575481
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|a 10.1007/978-1-4615-7548-1
|2 doi
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|a (DE-He213)978-1-4615-7548-1
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|a E-Book
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|a Optical Properties of Semiconductors
|h [electronic resource] /
|c edited by N. G. Basov.
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| 250 |
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|a 1st ed. 1976.
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| 264 |
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1 |
|a New York, NY :
|b Springer US :
|b Imprint: Springer,
|c 1976.
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| 300 |
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|a VIII, 181 p. 11 illus.
|b online resource.
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|a text
|b txt
|2 rdacontent
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|b PDF
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| 490 |
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|a The Lebedev Physics Institute Series, Proceedings (Trudy) of the P. N. Lebedev Physics Institute ;
|v 75
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| 490 |
1 |
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|a Springer eBook Collection
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|a Radiation Emitted from Semiconductor Lasers in Strong Magnetic Fields and under High Hydrostatic Pressures -- I Influence of Magnetic Fields and High Pressures on Energy Spectra of Semiconductors -- §1. Influence of Magnetic Fields on Energy Structure of III–V and IV–VI Semiconductor Compounds -- §2. Influence of Pressure on Energy Structures of III–V and IV–VI Compounds -- §3. Characteristics of Semiconductor Laser Operation Affected by Variation of Temperature, Pressure, and Magnetic Field -- II Experimental Method -- §1. Apparatus for Excitation of Injection Lasers and Recording of Emission Spectra -- §2. Q-Switched CO2 Laser -- §3. Technique Used in Low-Tempe rature Magnetooptic Investigations at Infrared Wavelengths -- §4. Apparatus Used in Optical Measurements at Infrared Wavelengths under High Hydrostatic Pressures at 77°K -- §5. Zinc- and Copper-Doped Germanium Infrared-Radiation Detectors -- §6. Scanning of Infrared Radiation Emitted from InSb Crystals -- §7. Other Measurements -- III Influence of Magnetic Fields on Emission Spectra of p-n Junctions in InAs, InSb, and PbSe -- §1. Spontaneous and Coherent Radiation Emitted from InAs Injection Lasers -- §2. Radiation Emitted from InSb Injection Lasers in Strong Magnetic Fields. Position of Light-Emission Region -- §3. Spontaneous and Coherent Radiation Emitted from p-n Junctions in PbSe, -- IV Magnetically Tuned Stimulated Raman Emission from Indium Antimonide -- §1. Raman Scattering of Light by Plasmons and Landau Levels in Semiconductors -- §2. Stimulated Raman Scattering of Light Accompanied by Spin Flip in Indium Antimonide -- §3. Discussion of Results -- V Influence of Pressure on Radiation Emitted from Lead Selenide and Gallium Arsenide Semiconductor Lasers -- §1. Emission Spectra of PbSe Lasers -- §2. Emission Spectra of GaAs Lasers -- §3. Discussion of Results -- Conclusions -- Literature Cited -- Investigation of the Collective Properties of Excitons in Germanium by Long-Wavelength Infrared Spectroscopy Methods -- I Energy Spectra and Collective Properties of Excitons in Semiconductors -- 1. Energy Spectrum of Excitons -- §1. Theoretical Calculations -- §2. Experimental Results -- 2. Collective Properties of Exciton Systems -- §1. Theoretical Representations -- §2. Discussion of Experimental Results -- II Methods used in Far-Infrared Investigations of Excitons in Semiconductors -- §1. Spectroscopic Measurements -- §2. Apparatus Used in Low-Tempe rature Optical Measurements under Interband Excitation Conditions -- §3. Sources of Exciting Radiation -- §4. Thermal Conditions -- III Far-Infrared Resonance Absorption in Condensed Exciton Phase in Germanium -- §1. Absorption Spectra of Intrinsic Germanium -- §2. Discussion of Parameters of Electron —Hole Drops (n0 and ?) -- §3. Temperature Dependence of Resonance Absorption -- §4. Dependence of Resonance Absorption on Excitation Rate -- §5. Resonance Absorption in Doped Germanium -- IV Resonance Luminescence of Condensed Exciton Phase in Germanium -- §1. Experimental Investigation of Resonance Luminescence -- §2. Discussion of Experimental Results. Effective Luminescence Temperature of Drops -- §3. Influence of Inhomogeneous Deformation on Resonance Absorption and Luminescence. Mobility of Electron-Hole Drops -- V Photoionization and Excitation of Free Excitons in Germanium by Submillimeter Radiation -- §1. Photoionization and Excitation Spectra -- §2. Discussion of Experimental Results. Energy Levels of Excitons -- Literature Cited -- Collective Interactions of Excitons and Nonequilibrium Carriers in Gallium Arsenide and Silicon -- I Collective Interactions of Excitons in Semiconductors -- II Measurement Method -- §1. Optical System and Method of Recording Luminescence during Continuous Optical Excitation -- §2. Optical System and Method of Recording Luminescence Due to High-Power Light Pulses -- §3. Temperature Measurement Method -- §4. Determination of Temperature Rise in a Semiconductor during Continuous Optical Excitation -- §5. Determination of Temperature Rise in a Semiconductor during Illumination with High-Power Light Pulses -- III Photoluminescence of Gallium Arsenide -- §1. Excitons in GaAs and Their Role in Radiative Recombination -- §2. Investigation of Luminescence Spectra of GaAs at Different Optical Excitation Rates and Helium Temperatures -- §3. Photoluminescence of GaAs at Temperatures 2–100°K. Investigation of Temperature Dependence of Recombination Radiation Intensity -- §4. Photoluminescence Spectra of GaAs at T = 77°K -- §5. Discussion of Results -- §6. Supplement. Possibility of Existence of Condensate in Pure Epitaxial GaAs Films -- IV Change in Absorption Coefficient of Undoped GaAs Due to Strong Optical Excitation -- V Investigation of Photoluminescence Spectra of Silicon at Different Optical Excitation Rates -- §1. Review of Literature -- §2. Experimental Investigation of the Photoluminescence of Si at Different Optical Excitation Rates -- §3. Photoluminescence Spectra of Si at Different Temperatures. Investigation of the Temperature Dependence of the Luminescence Intensity -- §4. Determination of the Binding Energy of Free Excitons from the Fall of the Luminescence Intensity with Rising Temperature -- §5. Discussion of Experimental Results -- VI Photoelectric Properties of Silicon at High Optical Excitation Rates -- §1. Review of Literature -- §2. Measurement Method -- §3. Photoluminescence Spectra of Si in the Presence of Static Electric Fields. Impact Ionization of Free Excitons -- §4. Kinetics of Recombination Processes in Si -- §5. Investigation of Excitons at High Concentrations in Weak Electric Fields -- Literature Cited.
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| 590 |
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|a Loaded electronically.
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| 590 |
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|a Electronic access restricted to members of the Holy Cross Community.
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| 650 |
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|a Solid state physics.
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| 650 |
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|a Spectroscopy.
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| 650 |
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|a Microscopy.
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| 690 |
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|a Electronic resources (E-books)
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| 700 |
1 |
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|a Basov, N. G.
|e editor.
|4 edt
|4 http://id.loc.gov/vocabulary/relators/edt
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| 710 |
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|a SpringerLink (Online service)
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|t Springer eBooks
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| 830 |
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|a The Lebedev Physics Institute Series, Proceedings (Trudy) of the P. N. Lebedev Physics Institute ;
|v 75
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| 830 |
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|a Springer eBook Collection.
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| 856 |
4 |
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|u https://holycross.idm.oclc.org/login?auth=cas&url=https://doi.org/10.1007/978-1-4615-7548-1
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