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Optical Properties of Semicond...
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Optical Properties of Semiconductors edited by N. G. Basov.
Saved in:
Bibliographic Details
Corporate Author:
SpringerLink (Online service)
Other Authors:
Basov, N. G.
(Editor)
Format:
eBook
Language:
English
Published:
New York, NY :
Springer US : Imprint: Springer,
1976.
Edition:
1st ed. 1976.
Series:
The Lebedev Physics Institute Series, Proceedings (Trudy) of the P. N. Lebedev Physics Institute ;
75
Springer eBook Collection.
Subjects:
Solid state physics.
Spectroscopy.
Microscopy.
Electronic resources (E-books)
Online Access:
Click to view e-book
Holy Cross Note:
Loaded electronically.
Electronic access restricted to members of the Holy Cross Community.
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Description
Table of Contents
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Table of Contents:
Radiation Emitted from Semiconductor Lasers in Strong Magnetic Fields and under High Hydrostatic Pressures
I Influence of Magnetic Fields and High Pressures on Energy Spectra of Semiconductors
§1. Influence of Magnetic Fields on Energy Structure of III–V and IV–VI Semiconductor Compounds
§2. Influence of Pressure on Energy Structures of III–V and IV–VI Compounds
§3. Characteristics of Semiconductor Laser Operation Affected by Variation of Temperature, Pressure, and Magnetic Field
II Experimental Method
§1. Apparatus for Excitation of Injection Lasers and Recording of Emission Spectra
§2. Q-Switched CO2 Laser
§3. Technique Used in Low-Tempe rature Magnetooptic Investigations at Infrared Wavelengths
§4. Apparatus Used in Optical Measurements at Infrared Wavelengths under High Hydrostatic Pressures at 77°K
§5. Zinc- and Copper-Doped Germanium Infrared-Radiation Detectors
§6. Scanning of Infrared Radiation Emitted from InSb Crystals
§7. Other Measurements
III Influence of Magnetic Fields on Emission Spectra of p-n Junctions in InAs, InSb, and PbSe
§1. Spontaneous and Coherent Radiation Emitted from InAs Injection Lasers
§2. Radiation Emitted from InSb Injection Lasers in Strong Magnetic Fields. Position of Light-Emission Region
§3. Spontaneous and Coherent Radiation Emitted from p-n Junctions in PbSe,
IV Magnetically Tuned Stimulated Raman Emission from Indium Antimonide
§1. Raman Scattering of Light by Plasmons and Landau Levels in Semiconductors
§2. Stimulated Raman Scattering of Light Accompanied by Spin Flip in Indium Antimonide
§3. Discussion of Results
V Influence of Pressure on Radiation Emitted from Lead Selenide and Gallium Arsenide Semiconductor Lasers
§1. Emission Spectra of PbSe Lasers
§2. Emission Spectra of GaAs Lasers
§3. Discussion of Results
Conclusions
Literature Cited
Investigation of the Collective Properties of Excitons in Germanium by Long-Wavelength Infrared Spectroscopy Methods
I Energy Spectra and Collective Properties of Excitons in Semiconductors
1. Energy Spectrum of Excitons
§1. Theoretical Calculations
§2. Experimental Results
2. Collective Properties of Exciton Systems
§1. Theoretical Representations
§2. Discussion of Experimental Results
II Methods used in Far-Infrared Investigations of Excitons in Semiconductors
§1. Spectroscopic Measurements
§2. Apparatus Used in Low-Tempe rature Optical Measurements under Interband Excitation Conditions
§3. Sources of Exciting Radiation
§4. Thermal Conditions
III Far-Infrared Resonance Absorption in Condensed Exciton Phase in Germanium
§1. Absorption Spectra of Intrinsic Germanium
§2. Discussion of Parameters of Electron —Hole Drops (n0 and ?)
§3. Temperature Dependence of Resonance Absorption
§4. Dependence of Resonance Absorption on Excitation Rate
§5. Resonance Absorption in Doped Germanium
IV Resonance Luminescence of Condensed Exciton Phase in Germanium
§1. Experimental Investigation of Resonance Luminescence
§2. Discussion of Experimental Results. Effective Luminescence Temperature of Drops
§3. Influence of Inhomogeneous Deformation on Resonance Absorption and Luminescence. Mobility of Electron-Hole Drops
V Photoionization and Excitation of Free Excitons in Germanium by Submillimeter Radiation
§1. Photoionization and Excitation Spectra
§2. Discussion of Experimental Results. Energy Levels of Excitons
Literature Cited
Collective Interactions of Excitons and Nonequilibrium Carriers in Gallium Arsenide and Silicon
I Collective Interactions of Excitons in Semiconductors
II Measurement Method
§1. Optical System and Method of Recording Luminescence during Continuous Optical Excitation
§2. Optical System and Method of Recording Luminescence Due to High-Power Light Pulses
§3. Temperature Measurement Method
§4. Determination of Temperature Rise in a Semiconductor during Continuous Optical Excitation
§5. Determination of Temperature Rise in a Semiconductor during Illumination with High-Power Light Pulses
III Photoluminescence of Gallium Arsenide
§1. Excitons in GaAs and Their Role in Radiative Recombination
§2. Investigation of Luminescence Spectra of GaAs at Different Optical Excitation Rates and Helium Temperatures
§3. Photoluminescence of GaAs at Temperatures 2–100°K. Investigation of Temperature Dependence of Recombination Radiation Intensity
§4. Photoluminescence Spectra of GaAs at T = 77°K
§5. Discussion of Results
§6. Supplement. Possibility of Existence of Condensate in Pure Epitaxial GaAs Films
IV Change in Absorption Coefficient of Undoped GaAs Due to Strong Optical Excitation
V Investigation of Photoluminescence Spectra of Silicon at Different Optical Excitation Rates
§1. Review of Literature
§2. Experimental Investigation of the Photoluminescence of Si at Different Optical Excitation Rates
§3. Photoluminescence Spectra of Si at Different Temperatures. Investigation of the Temperature Dependence of the Luminescence Intensity
§4. Determination of the Binding Energy of Free Excitons from the Fall of the Luminescence Intensity with Rising Temperature
§5. Discussion of Experimental Results
VI Photoelectric Properties of Silicon at High Optical Excitation Rates
§1. Review of Literature
§2. Measurement Method
§3. Photoluminescence Spectra of Si in the Presence of Static Electric Fields. Impact Ionization of Free Excitons
§4. Kinetics of Recombination Processes in Si
§5. Investigation of Excitons at High Concentrations in Weak Electric Fields
Literature Cited.
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