Amorphous and Crystalline Silicon Carbide II Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15—16, 1988 / edited by Mahmud M. Rahman, Cary Y.-W. Yang, Gary L. Harris.

This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC he...

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Bibliographic Details
Corporate Author:	SpringerLink (Online service)
Other Authors:	Rahman, Mahmud M. (Editor), Yang, Cary Y.-W (Editor), Harris, Gary L. (Editor)
Format:	eBook
Language:	English
Published:	Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 1989.
Edition:	1st ed. 1989.
Series:	Springer Proceedings in Physics, 43 Springer eBook Collection.
Subjects:	Crystallography. Polymers . Electronics. Microelectronics. Materials science. Electronic resources (E-books)
Online Access:	Click to view e-book
Holy Cross Note:	Loaded electronically. Electronic access restricted to members of the Holy Cross Community.

Table of Contents:

I Growth of Crystalline Silicon Carbide
Crystalline SiC on Si and High Temperature Operational Devices (With 7 Figures)
Heteroepitaxial Growth of Cubic SiC on a Si Substrate Using the Si2H6-C2H2-H2 System (With 6 Figures)
Chemical Vapor Deposition of Single Crystal ?-SiC (With 4 Figures)
?-Silicon Carbide Prepared by Rapid Thermal Chemical Vapor Deposition (With 4 Figures)
Single Crystal Growth of 6H-SiC by a Vacuum Sublimation Method, and Blue LEDs (With 17 Figures)
Polytype Change of Silicon Carbide at High Temperatures (With 3 Figures)
Epitaxial Growth of (SiC)xGe1-x on Silicon Substrates (With 1 Figure)
One-Dimensional Fluid Mechanics/Kinetics Modeling of the CVD of SiC in a Vertical Reactor
II Growth of Amorphous, Microcrystalline, and Polycrystalline Silicon Carbide
Properties of a-SiC:H Films Prepared with a Field-Enhanced RF Glow-Discharge System (With 4 Figures)
Preparation of Microcrystalline Silicon Carbide Thin Films for the Emitter of Si HBTs (With 4 Figures)
High-Quality Microcrystalline SiC Films Fabricated by the Controlled Plasma Magnetron Method (With 10 Figures)
Electron-Cyclotron-Resonance Plasma Deposition of Carbon onto Silicon (With 8 Figures)
Preparation and Characterization of Amorphous SiC Film by a Liquid Route (With 2 Figures)
III Characterization of Silicon Carbide
Gap States of Highly Photosensitive a-SiC:H (With 5 Figures)
X-Ray Photoelectron Spectroscopy Study of Hydrogenated Amorphous Silicon Carbide Films (With 4 Figures)
Doping-Induced Structural Change in Amorphous Silicon (Carbon) Hydrogen Alloy (With 6 Figures)
Small Angle X-Ray Scattering from Microvoids in the a-SiC:H Alloy (With 3 Figures)
Studies on Carrier Lifetime and Deep Levels in CVD-Grown 3C-SiC by Photoconductivity and Microwave Absorption (With 8 Figures)
ESR Study of Defects in Epitaxially Grown 3C-SiC (With 4 Figures)
Time-Resolved Photoluminescence Studies of Undoped and Al-Doped Cubic SiC (With 3 Figures)
Photoluminescence Imaging of Spatial Distribution of Recombination Centers in Cubic SiC (With 3 Figures)
Stress-Induced Defects vs Growth Faults in CVD-Grown SiC
Crystalline Defects in ?-SiC as Revealed by a NaOH-KOH Eutectic Etch (With 6 Figures)
Ellipsometric Study of Cubic SiC
Photoluminescence and Transmission Electron Microscopy of Defects in SiC Grown on Si
Vibrational and Electrical Properties of n and p Doped a-SiC:H Films
IV Growth and Applications of Diamond Thin Films
Current Status of Diamond Thin Films
New Material and Device Design Considerations for High-Power Electronics
Active and Passive Electronic Applications of CVD Diamond Films
V Surfaces and Interfaces of Silicon Carbide
Surface and Interface Studies of SiC (Buffer-Layer)/Si(100) (With 6 Figures)
The Influence of Hydrogen on the Transition from Amorphous to Crystalline Structure in Plasma Deposition of Silicon and Alloys
Microstructure of the a-Si1-xCx:H/c-Si Interface (With 2 Figures)
Atomic Layer Control in Cubic SiC Growth Utilizing Surface Superstructure in Gas Source MBE (With 7 Figures)
On the Stability of a Cr + C Phase on (100) 3C SiC at Elevated Temperatures
VI Processing and Device Applications of Silicon Carbide
Physics and Applications of Amorphous Silicon Carbide (With 6 Figures)
?-SiC on Titanium Carbide for Solid State Devices (With 12 Figures)
Fabrication of MOSFETs on ?-SiC Single Crystalline Layers Grown on Si(100) Substrates (With 6 Figures)
A High Transconductance ?-SiC Buried-Gate Junction Field Effect Transistor (With 5 Figures)
SiC as a Potential FET Gate Insulator (With 8 Figures)
Applications of High Purity SiC Prepared by Chemical Vapor Deposition (With 12 Figures)
SiC/Si HBT Using Polycrystalline SiC Layers Prepared by Electron Beam Evaporation (With 5 Figures)
Thin Film Transistors Using Polycrystalline SiC (With 8 Figures)
Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films (With 6 Figures)
W/SiC Contact Resistance at Elevated Temperatures (With 2 Figures)
Application of Excimer Laser Processing in SiC Device Fabrication
Index of Contributors.

Amorphous and Crystalline Silicon Carbide II Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15—16, 1988 / edited by Mahmud M. Rahman, Cary Y.-W. Yang, Gary L. Harris.

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