Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications edited by Kevin Peter O'Donnell, Volkmar Dierolf.

This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoe...

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Bibliographic Details
Corporate Author: SpringerLink (Online service)
Other Authors: O'Donnell, Kevin Peter (Editor), Dierolf, Volkmar (Editor)
Format: eBook
Language:English
Published: Dordrecht : Springer Netherlands : Imprint: Springer, 2010.
Edition:1st ed. 2010.
Series:Topics in Applied Physics, 124
Springer eBook Collection.
Subjects:
Lasers.
Photonics.
Optical materials.
Electronic materials.
Quantum optics.
Electronic resources (E-books)
Online Access:Click to view e-book
Holy Cross Note:Loaded electronically.
Electronic access restricted to members of the Holy Cross Community.
Table of Contents:
  • Theoretical Modelling of Rare Earth Dopants in GaN
  • RE Implantation and Annealing of III-Nitrides
  • Lattice Location of RE Impurities in IIINitrides
  • Electroluminescent Devices Using RE-Doped III-Nitrides
  • Er-Doped GaN and InxGa1-xN for Optical Communications
  • Rare-Earth-Doped GaN Quantum Dot
  • Visible Luminescent RE-doped GaN, AlGaN and AlInN
  • Combined Excitation Emission Spectroscopy (CEES) of RE Ions in Gallium Nitride
  • Excitation Mechanisms of RE Ions in Semiconductors
  • High-Temperature Ferromagnetism in the Super-Dilute Magnetic Semiconductor GaN:Gd
  • Summary and Prospects for Future Work.

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