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00000cam a2200000Mi 4500 |
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ocn475932992 |
| 003 |
OCoLC |
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20241006213017.0 |
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m o d |
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cr mn|---||||| |
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091207s2004 si o 000 0 eng d |
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|a EBLCP
|b eng
|e pn
|c EBLCP
|d OCLCQ
|d DEBSZ
|d OCLCQ
|d ZCU
|d MERUC
|d OCLCQ
|d ICG
|d AU@
|d OCLCQ
|d DKC
|d UMR
|d OCLCQ
|d OCLCO
|d OCLCQ
|d QGK
|d OCLCO
|d OCLCL
|d OCLCQ
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| 019 |
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|a 1259235651
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| 020 |
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|a 9789812562364
|q (electronic bk.)
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| 020 |
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|a 9812562362
|q (electronic bk.)
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| 020 |
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|a 1281347620
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| 020 |
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|a 9781281347626
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| 020 |
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|a 9786611347628
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| 020 |
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|a 6611347623
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| 035 |
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|a (OCoLC)475932992
|z (OCoLC)1259235651
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| 050 |
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4 |
|a TK7871.15.G33G36 2004eb
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| 049 |
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|a HCDD
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| 100 |
1 |
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|a Shur, Michael.
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| 245 |
1 |
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|a Gan-based Materials And Devices :
|b Growth, Fabrication, Characterization And Performance.
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| 250 |
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|a 33th ed.
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| 260 |
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|a Singapore :
|b World Scientific,
|c 2004.
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| 300 |
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|a 1 online resource (295 pages)
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| 336 |
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|a text
|b txt
|2 rdacontent
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| 337 |
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|a computer
|b c
|2 rdamedia
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| 338 |
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|a online resource
|b cr
|2 rdacarrier
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| 490 |
1 |
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|a Selected topics in electronics and systems ;
|v v. 33
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| 520 |
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|a The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
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| 588 |
0 |
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|a Print version record.
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|a Preface; CONTENTS; Materials Properties of Nitrides. Summary; Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy; Strain of GaN Layers Grown Using 6H-SiC(0001) Substrates with Different Buffer Layers; Growth of Thick GaN Films and Seeds for Bulk Crystal Growth; Cracking of GaN Films; Direct Bonding of GaN and SiC; A Novel Technique for Electronic Device Fabrication; Electronic Properties of GaN (0001) -- Dielectronic Interfaces; Transport and Noise Properties; Quasi-Ballistic and Overshoot Transport in Group III-Nitrides; High Field Transport in AIN.
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| 505 |
8 |
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|a Generation-Recombination Noise in GaN-Based DevicesInsulated Gate III-N Heterostructure Field-Effect Transistors; High Voltage AIGaN/GaN Heterojunction Transistors; Etched Aperture GaN CAVET Through Photoelectrochemical Wet Etching; n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion.
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| 504 |
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|a Includes bibliographical references.
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| 546 |
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|a English.
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| 650 |
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0 |
|a Gallium nitride, Semiconductors
|x Materials.
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| 700 |
1 |
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|a Davis, Robert F.
|q (Robert Foster),
|d 1942-
|1 https://id.oclc.org/worldcat/entity/E39PBJh4rJVGBd8dWYmvXwTj4q
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| 776 |
1 |
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|z 9789812388445
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| 830 |
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0 |
|a Selected topics in electronics and systems ;
|v v. 33.
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| 856 |
4 |
0 |
|u https://ebookcentral.proquest.com/lib/holycrosscollege-ebooks/detail.action?docID=227133
|y Click for online access
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| 903 |
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|a EBC-AC
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| 994 |
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|a 92
|b HCD
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