Physics and modeling of tera-and nano-devices

Physics and modeling of tera-and nano-devices / editors, Maxim Ryzhii, Victor Ryzhii.

Physics and Modeling of Tera- and Nano-Devices is a compilation of papers by well-respected researchers working in the field of physics and modeling of novel electronic and optoelectronic devices. The topics covered include devices based on carbon nanotubes, generation and detection of terahertz rad...

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Bibliographic Details
Other Authors: Ryzhii, Maxim, Ryzhii, Victor
Format: eBook
Language:English
Published: Singapore : World Scientific, ©2008.
Series:Selected topics in electronics and systems ; v. 47.
Subjects:
Nanoscience > Congresses.
Nanotechnology > Congresses.
Nanostructured materials > Congresses.
Terahertz technology > Congresses.
Optoelectronics > Congresses.
Optoelectronic devices > Congresses.
Nanoscience
Nanostructured materials
Nanotechnology
Optoelectronic devices
Optoelectronics
Terahertz technology
Conference papers and proceedings
Online Access:Click for online access
Table of Contents:
  • Preface; CONTENTS; Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires D.K . Ferry, R . Akis, M.J . Gilbert, A . Cummings and S.M. Ramey; 1. Introduction; 2. Discrete Impurity Scattering Effects; 3. Ballistic Transport in Nano-Devices; 4. Nanowire Devices; 5. Conclusions; References; Polaronic Effects at the Field Effect Junctions for Unconventional Semiconductors N. Kirova; 1. Introduction; 2. Junction with Isotropic Semiconductor; 3. Surface Long Range Polarons in Molecular Crystals; 4. Junction with Conducting Polymer; 5. Conclusions; References.
  • Cellular Monte Carlo Simulation of High Field Transport in Semiconductor Devices S.M. Goodnick and M. Saraniti1. Introduction; 2. Cellular Monte Carlo Method; 3. High Field Transport; 4. CMC Device Modeling; 4.1. SOI and GOI MOSFETs; 4.2. AlGaN/GaN HFETs; Acknowledgments; References; Nanoelectronic Device Simulation Based on the Wigner Function Formalism H. Kosina; 1. Introduction; 2. The Physical Model; 3. Numerical Methods; 3.1. Particle Generation; 3.2. Particle Annihilation; 3.3. Coupling to the Poisson Equation; 4. Results; 5 . Discussion; 5.1. Interpretation of the Results.
  • 5.2. The Bound-states Problem6. Conclusions; Acknowledgment; References; Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org S. Ahmed, G. Klimeck, D. Kearney, M. McLennan and M.P. Anantram; 1. Introduction; 2. Nanoscale Device Simulation: Quantum Effects; 3. Community Nanoscale MOSFET Softwares; 3.1 nanoFET; 3.2 nanoMOS; 3.3 QuaMC; 4. Simulation Results and Discussion; 5. Conclusion; Acknowledgments; References.
  • Positive Magneto-Resistance in a Point Contact: Possible Manifestation of Interactions V.T. Renard, T. Ota, N. Kumada and H. Hirayama1. Introduction; 2. Experiment; 3. Results and discussion; 4. Conclusion; Acknowledgments; References; Impact of Intrinsic Parameter Fluctuations in Nano-CMOS Devices on Circuits and Systems S. Roy, B. Cheng and A . Asenov; 1. Introduction; 2. Statistical Device Simulation; 3. Impact of Intrinsic Parameter Fluctuations on Circuits; 3.1. Impact of RDF on 6-TSMM Cells; 4. Conclusions; Acknowledgments; References.
  • HEMT-Based Nanometer Devices Toward Tetrahertz Era E. Sano and T. Otsuji1. Introduction; 2. Present Status of Millimeter-Wave MMICs; 3. Problems in Nanometer-Scale HEMTs; 4. Plasmon Resonant Photomixer; 5. Conclusions; Acknowledgments; References; Plasma Waves in Two-Dimensional Electron Systems and Their Applications V. Ryzhii, I. Khmyrova, M. Ryzhii, A . Satou, T. Otsuji, V. Mitin and M.S. Shur; 1. Introduction; 2. Plasma Waves and Oscillations in 2DEG Channels; 3. Plasma Instabilities.

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