Diode lasers and photonic integrated circuits

Diode lasers and photonic integrated circuits / Larry A. Coldren, Scott W. Corzine, Milan L. Mas̆anović.

Diode Lasers and Photonic Integrated Circuits, Second Edition provides a comprehensive treatment of optical communication technology, its principles and theory, treating students as well as experienced engineers to an in-depth exploration of this field. Diode lasers are still of significant importan...

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Bibliographic Details
Main Author: Coldren, L. A. (Larry A.)
Other Authors: Corzine, S. W. (Scott W.), Mashanovitch, Milan, 1974-
Format: eBook
Language:English
Published: Hoboken, N.J. : Wiley, ©2012.
Edition:2nd ed.
Series:Wiley series in microwave and optical engineering ; 218.
Subjects:
Semiconductor lasers.
Integrated circuits.
TECHNOLOGY & ENGINEERING > Imaging Systems.
Integrated circuits
Semiconductor lasers
Online Access:Click for online access
Table of Contents:
  • Diode Lasers and Photonic Integrated Circuits; Contents; Preface; Acknowledgments; List of Fundamental Constants; 1 Ingredients; 1.1 Introduction; 1.2 Energy Levels and Bands in Solids; 1.3 Spontaneous and Stimulated Transitions: The Creation of Light; 1.4 Transverse Confinement of Carriers and Photons in Diode Lasers: The Double Heterostructure; 1.5 Semiconductor Materials for Diode Lasers; 1.6 Epitaxial Growth Technology; 1.7 Lateral Confinement of Current, Carriers, and Photons for Practical Lasers; 1.8 Practical Laser Examples; References; Reading List; Problems.
  • 2 A Phenomenological Approach to Diode Lasers2.1 Introduction; 2.2 Carrier Generation and Recombination in Active Regions; 2.3 Spontaneous Photon Generation and LEDs; 2.4 Photon Generation and Loss in Laser Cavities; 2.5 Threshold or Steady-State Gain in Lasers; 2.6 Threshold Current and Power Out Versus Current; 2.6.1 Basic P-I Characteristics; 2.6.2 Gain Models and Their Use in Designing Lasers; 2.7 Relaxation Resonance and Frequency Response; 2.8 Characterizing Real Diode Lasers; 2.8.1 Internal Parameters for In-Plane Lasers: áaiñ, ni, and g versus J.
  • 2.8.2 Internal Parameters for VCSELs: ni and g versus J, áaiñ, and am2.8.3 Efficiency and Heat Flow; 2.8.4 Temperature Dependence of Drive Current; 2.8.5 Derivative Analysis; References; Reading List; Problems; 3 Mirrors and Resonators for Diode Lasers; 3.1 Introduction; 3.2 Scattering Theory; 3.3 S and T Matrices for Some Common Elements; 3.3.1 The Dielectric Interface; 3.3.2 Transmission Line with No Discontinuities; 3.3.3 Dielectric Segment and the Fabry-Perot Etalon; 3.3.4 S-Parameter Computation Using Mason's Rule; 3.3.5 Fabry-Perot Laser; 3.4 Three- and Four-Mirror Laser Cavities.
  • 3.4.1 Three-Mirror Lasers3.4.2 Four-Mirror Lasers; 3.5 Gratings; 3.5.1 Introduction; 3.5.2 Transmission Matrix Theory of Gratings; 3.5.3 Effective Mirror Model for Gratings; 3.6 Lasers Based on DBR Mirrors; 3.6.1 Introduction; 3.6.2 Threshold Gain and Power Out; 3.6.3 Mode Selection in DBR-Based Lasers; 3.6.4 VCSEL Design; 3.6.5 In-Plane DBR Lasers and Tunability; 3.6.6 Mode Suppression Ratio in DBR Laser; 3.7 DFB Lasers; 3.7.1 Introduction; 3.7.2 Calculation of the Threshold Gains and Wavelengths; 3.7.3 On Mode Suppression in DFB Lasers; References; Reading List; Problems.
  • 4 Gain and Current Relations4.1 Introduction; 4.2 Radiative Transitions; 4.2.1 Basic Definitions and Fundamental Relationships; 4.2.2 Fundamental Description of the Radiative Transition Rate; 4.2.3 Transition Matrix Element; 4.2.4 Reduced Density of States; 4.2.5 Correspondence with Einstein's Stimulated Rate Constant; 4.3 Optical Gain; 4.3.1 General Expression for Gain; 4.3.2 Lineshape Broadening; 4.3.3 General Features of the Gain Spectrum; 4.3.4 Many-Body Effects; 4.3.5 Polarization and Piezoelectricity; 4.4 Spontaneous Emission; 4.4.1 Single-Mode Spontaneous Emission Rate.

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