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|a (OCoLC)891449984
|z (OCoLC)907362823
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|a TK7871.15.S56 .K56 2014
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|a HCDD
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|a Kimoto, Tsunenobu.
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|a Fundamentals of Silicon Carbide Technology :
|b Growth, Characterization, Devices and Applications.
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|a Hoboken :
|b Wiley,
|c 2014.
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| 300 |
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|a 1 online resource (555 pages)
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| 336 |
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|a text
|b txt
|2 rdacontent
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| 337 |
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|a computer
|b c
|2 rdamedia
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| 338 |
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|a online resource
|b cr
|2 rdacarrier
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0 |
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|a Print version record.
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|a Cover; Title Page; Copyright; Contents; About the Authors; Preface; Chapter 1 Introduction; 1.1 Progress in Electronics; 1.2 Features and Brief History of Silicon Carbide; 1.2.1 Early History; 1.2.2 Innovations in SiC Crystal Growth; 1.2.3 Promise and Demonstration of SiC Power Devices; 1.3 Outline of This Book; References; Chapter 2 Physical Properties of Silicon Carbide; 2.1 Crystal Structure; 2.2 Electrical and Optical Properties; 2.2.1 Band Structure; 2.2.2 Optical Absorption Coefficient and Refractive Index; 2.2.3 Impurity Doping and Carrier Density; 2.2.4 Mobility; 2.2.5 Drift Velocity.
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|a 2.2.6 Breakdown Electric Field Strength2.3 Thermal and Mechanical Properties; 2.3.1 Thermal Conductivity; 2.3.2 Phonons; 2.3.3 Hardness and Mechanical Properties; 2.4 Summary; References; Chapter 3 Bulk Growth of Silicon Carbide; 3.1 Sublimation Growth; 3.1.1 Phase Diagram of Si-C; 3.1.2 Basic Phenomena Occurring during the Sublimation (Physical Vapor Transport) Method; 3.1.3 Modeling and Simulation; 3.2 Polytype Control in Sublimation Growth; 3.3 Defect Evolution and Reduction in Sublimation Growth; 3.3.1 Stacking Faults; 3.3.2 Micropipe Defects; 3.3.3 Threading Screw Dislocation.
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|a 3.3.4 Threading Edge Dislocation and Basal Plane Dislocation3.3.5 Defect Reduction; 3.4 Doping Control in Sublimation Growth; 3.4.1 Impurity Incorporation; 3.4.2 n-Type Doping; 3.4.3 p-Type Doping; 3.4.4 Semi-Insulating; 3.5 High-Temperature Chemical Vapor Deposition; 3.6 Solution Growth; 3.7 3C-SiC Wafers Grown by Chemical Vapor Deposition; 3.8 Wafering and Polishing; 3.9 Summary; References; Chapter 4 Epitaxial Growth of Silicon Carbide; 4.1 Fundamentals of SiC Homoepitaxy; 4.1.1 Polytype Replication in SiC Epitaxy; 4.1.2 Theoretical Model of SiC Homoepitaxy; 4.1.3 Growth Rate and Modeling.
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|a 4.1.4 Surface Morphology and Step Dynamics4.1.5 Reactor Design for SiC Epitaxy; 4.2 Doping Control in SiC CVD; 4.2.1 Background Doping; 4.2.2 n-Type Doping; 4.2.3 p-Type Doping; 4.3 Defects in SiC Epitaxial Layers; 4.3.1 Extended Defects; 4.3.2 Deep Levels; 4.4 Fast Homoepitaxy of SiC; 4.5 SiC Homoepitaxy on Non-standard Planes; 4.5.1 SiC Homoepitaxy on Nearly On-Axis {0001}; 4.5.2 SiC Homoepitaxy on Non-basal Planes; 4.5.3 Embedded Homoepitaxy of SiC; 4.6 SiC Homoepitaxy by Other Techniques; 4.7 Heteroepitaxy of 3C-SiC; 4.7.1 Heteroepitaxial Growth of 3C-SiC on Si.
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|a 4.7.2 Heteroepitaxial Growth of 3C-SiC on Hexagonal SiC4.8 Summary; References; Chapter 5 Characterization Techniques and Defects in Silicon Carbide; 5.1 Characterization Techniques; 5.1.1 Photoluminescence; 5.1.2 Raman Scattering; 5.1.3 Hall Effect and Capacitance-Voltage Measurements; 5.1.4 Carrier Lifetime Measurements; 5.1.5 Detection of Extended Defects; 5.1.6 Detection of Point Defects; 5.2 Extended Defects in SiC; 5.2.1 Major Extended Defects in SiC; 5.2.2 Bipolar Degradation; 5.2.3 Effects of Extended Defects on SiC Device Performance; 5.3 Point Defects in SiC.
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|a 5.3.1 Major Deep Levels in SiC.
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|a A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applicationsBased on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, hig.
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|a Includes bibliographical references at the end of each chapters and index.
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| 650 |
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|a Silicon carbide.
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| 650 |
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|a Semiconductors.
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|a Integrated circuits.
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|a semiconductor.
|2 aat
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|a Integrated circuits
|2 fast
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|a Semiconductors
|2 fast
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|a Silicon carbide
|2 fast
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1 |
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|a Cooper, James A.
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| 758 |
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|i has work:
|a Fundamentals of silicon carbide technology (Text)
|1 https://id.oclc.org/worldcat/entity/E39PCGgQtMHdD6GvJpXcTqpKFq
|4 https://id.oclc.org/worldcat/ontology/hasWork
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| 776 |
0 |
8 |
|i Print version:
|a Kimoto, Tsunenobu.
|t Fundamentals of Silicon Carbide Technology : Growth, Characterization, Devices and Applications.
|d Hoboken : Wiley, ©2014
|z 9781118313527
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| 856 |
4 |
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|u https://ebookcentral.proquest.com/lib/holycrosscollege-ebooks/detail.action?docID=1794556
|y Click for online access
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|a EBC-AC
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|b HCD
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