Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction / Jianjun Gao.

A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBT...

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Bibliographic Details
Main Author: Gao, Jianjun, 1968-
Format: eBook
Language:English
Published: Singapore : Higher Education Press / Wiley, [2015]
Subjects:
Online Access:Click for online access

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LEADER 00000cam a2200000 i 4500
001 ocn903582747
003 OCoLC
005 20240809213013.0
006 m o d
007 cr |||||||||||
008 150216s2015 si ob 001 0 eng
010 |a  2015006217 
040 |a DLC  |b eng  |e rda  |e pn  |c DLC  |d OCLCF  |d IDEBK  |d DG1  |d N$T  |d E7B  |d EBLCP  |d DEBSZ  |d RECBK  |d OCLCO  |d CDX  |d YDXCP  |d OCLCQ  |d UIU  |d OCLCQ  |d DEBBG  |d MERUC  |d DG1  |d LIP  |d ZCU  |d OCLCQ  |d ICG  |d VT2  |d AU@  |d OCLCQ  |d WYU  |d U3W  |d OCLCQ  |d DKC  |d OCLCQ  |d UKAHL  |d UX1  |d OCLCQ  |d OCLCO  |d LUU  |d OCLCO  |d OCLCQ  |d OCLCO  |d UEJ  |d OCLCO  |d OCLCQ 
019 |a 908515140  |a 992825696  |a 1055382806  |a 1081287608  |a 1101715763  |a 1148091828 
020 |a 9781118921555  |q (epub) 
020 |a 1118921550  |q (epub) 
020 |a 9781118921548  |q (pdf) 
020 |a 1118921542  |q (pdf) 
020 |a 9781118921531 
020 |a 1118921534 
020 |a 1118921526 
020 |a 9781118921524 
020 |z 9781118921524  |q (cloth) 
035 |a (OCoLC)903582747  |z (OCoLC)908515140  |z (OCoLC)992825696  |z (OCoLC)1055382806  |z (OCoLC)1081287608  |z (OCoLC)1101715763  |z (OCoLC)1148091828 
042 |a pcc 
050 0 0 |a TK7871.96.B55 
072 7 |a TEC  |x 009070  |2 bisacsh 
049 |a HCDD 
100 1 |a Gao, Jianjun,  |d 1968-  |1 https://id.oclc.org/worldcat/entity/E39PCjHF99bDKTc839fFFTYfhd 
245 1 0 |a Heterojunction bipolar transistors for circuit design :  |b microwave modelling and parameter extraction /  |c Jianjun Gao. 
264 1 |a Singapore :  |b Higher Education Press / Wiley,  |c [2015] 
300 |a 1 online resource 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
504 |a Includes bibliographical references and index. 
588 0 |a Print version record and CIP data provided by publisher. 
520 |a A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and paramet. 
505 0 |a Title Page; Copyright Page; Contents; About the Author; Preface; Acknowledgments; Nomenclature; Chapter 1 Introduction; 1.1 Overview of Heterojunction Bipolar Transistors; 1.2 Modeling and Measurement for HBT; 1.3 Organization of This Book; References; Chapter 2 Basic Concept of Microwave Device Modeling; 2.1 Signal Parameters; 2.1.1 Low-Frequency Parameters; 2.1.2 S-Parameters; 2.2 Representation of Noisy Two-Port Network; 2.2.1 Noise Matrix; 2.2.2 Noise Parameters; 2.3 Basic Circuit Elements; 2.3.1 Resistance; 2.3.2 Capacitance; 2.3.3 Inductance; 2.3.4 Controlled Sources. 
505 8 |a 3.2.2 Equivalent Circuit Model3.2.3 Determination of Model Parameters; 3.3 BJT Physical Operation; 3.3.1 Device Structure; 3.3.2 The Modes of Operation; 3.3.3 Base-Width Modulation; 3.3.4 High Injection and Current Crowding; 3.4 Equivalent Circuit Model; 3.4.1 E-M Model; 3.4.2 G-P Model; 3.4.3 Noise Model; 3.5 Microwave Performance; 3.5.1 Transition Frequency; 3.5.2 Common-Emitter Configuration; 3.5.3 Common-Base Configuration; 3.5.4 Common-Collector Configuration; 3.5.5 Summary and Comparisons; 3.6 Summary; References; Chapter 4 Basic Principle of HBT; 4.1 Semiconductor Heterojunction. 
505 8 |a 5.5.1 Z Parameter Method5.5.2 Cold-HBT Method; 5.5.3 Open-Collector Method; 5.6 Extraction Method of Intrinsic Resistance; 5.6.1 Direct Extraction Method; 5.6.2 Hybrid Method; 5.7 Semianalysis Method; 5.8 Summary; References; Chapter 6 Large-Signal Equivalent Circuit Modeling of HBT; 6.1 Linear and Nonlinear; 6.1.1 Definition; 6.1.2 Nonlinear Lumped Elements; 6.2 Large Signal and Small Signal; 6.3 Thermal Resistance; 6.3.1 Definition; 6.3.2 Equivalent Circuit Model; 6.3.3 Determination of Thermal Resistance; 6.4 Nonlinear HBT Modeling; 6.4.1 VBIC Model; 6.4.2 Agilent Model. 
650 0 |a Bipolar transistors. 
650 0 |a Heterojunctions. 
650 0 |a Electronic circuit design. 
650 0 |a Microwave measurements. 
650 7 |a TECHNOLOGY & ENGINEERING  |x Mechanical.  |2 bisacsh 
650 7 |a Bipolar transistors  |2 fast 
650 7 |a Electronic circuit design  |2 fast 
650 7 |a Heterojunctions  |2 fast 
650 7 |a Microwave measurements  |2 fast 
776 0 8 |i Print version:  |a Gao, Jianjun, 1968-  |t Heterojunction bipolar transistors for circuit design.  |d Singapore : John Wiley and Sons, Inc., [2015]  |z 9781118921524  |w (DLC) 2015002782 
856 4 0 |u https://ebookcentral.proquest.com/lib/holycrosscollege-ebooks/detail.action?docID=4039880  |y Click for online access 
903 |a EBC-AC 
994 |a 92  |b HCD