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170909s2015 gw ob 000 0 eng d |
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|a EBLCP
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|a 1003200144
|a 1289379507
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|a 9783736980006
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|z 9783736990005
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|a (OCoLC)1003265745
|z (OCoLC)1003200144
|z (OCoLC)1289379507
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|a TK7871.15.G33
|b .W364 2015
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|a HCDD
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|a Wang, Xue.
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|a Controlled Growth of GaN Columns and 3D Core-Shell LEDs by MOVPE.
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|a Göttingen :
|b Cuvillier Verlag,
|c 2015.
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|a 1 online resource (187 pages)
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|a text
|b txt
|2 rdacontent
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|a computer
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|2 rdamedia
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|a online resource
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|a Print version record.
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|a CHAPTER 1 Introduction and Motivation; CHAPTER 2 Physical properties of group III-nitride system; CHAPTER 3 MOVPE Of GaN-based core-shell LED structures; CHAPTER 4 Characterization approaches; CHAPTER 5 Catalyst-free self-organized GaNcolumns; CHAPTER 6 N-polar GaN columns and core-shell LEDs; CHAPTER 7 Ga-polar GaN columns and core-shell LED structures; CHAPTER 8 Summary and outlook; Zusammenfassung; Acknowledgments; Bibliography; Publication and Patent List.
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|a Includes bibliographical references.
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|a Gallium nitride.
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|a Gallium nitride
|2 fast
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|i Print version:
|a Wang, Xue.
|t Controlled Growth of GaN Columns and 3D Core-Shell LEDs by MOVPE.
|d Göttingen : Cuvillier Verlag, ©2015
|z 9783736990005
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|u https://ebookcentral.proquest.com/lib/holycrosscollege-ebooks/detail.action?docID=5022372
|y Click for online access
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|a EBC-AC
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|a 92
|b HCD
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