Integrated electronics on aluminum nitride : materials and devices

Integrated electronics on aluminum nitride : materials and devices / Reet Chaudhuri.

This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole ch...

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Bibliographic Details
Main Author: Chaudhuri, Reet (Author)
Format: eBook
Language:English
Published: Cham : Springer, [2022]
Series:Springer theses.
Subjects:
Semiconductors.
Aluminum nitride.
semiconductor.
Aluminum nitride
Semiconductors
Online Access:Click for online access
Table of Contents:
  • Intro
  • Supervisor's Foreword
  • Acknowledgments
  • Contents
  • Parts of This Thesis Have Been Published in the Following Journal Articles
  • 1 Introduction
  • 1.1 Brief History of Semiconductors in Communication
  • 1.2 Layout of this Dissertation
  • References
  • 2 Polarization-Induced 2D Hole Gases in Undoped (In)GaN/AlN Heterostructures
  • 2.1 Introduction
  • 2.2 Polarization Charges in III-Nitride Heterostructures
  • 2.3 The Undoped GaN/AlN 2DHG
  • 2.4 Impurity Blocking Layers in the AlN Buffer Layer
  • 2.5 Very High density InGaN/AlN 2DHGs
  • 2.6 Conclusions
  • 2.7 Future Directions
  • 4.4.3 Shubhnikov-de-Haas Oscillations
  • 4.5 Future Directions
  • References
  • 5 AlN/GaN/AlN High Electron Mobility Transistors
  • 5.1 Introduction
  • 5.2 Thermal Advantage of AlN Buffer Layer
  • 5.3 MBE-Grown AlN Buffer Layers on SiC for RF HEMTs
  • 5.4 State-of-Art AlN/GaN/AlN HEMTs
  • 5.5 In-situ AlN Passivation for Reduced Dispersion
  • 5.5.1 GaN Channel Strain in AlN/GaN/AlN Heterostructures
  • 5.5.2 2DEG Transport in In-situ Passivated AlN/GaN/AlN Heterostructures
  • 5.5.3 Reduced Dispersion in AlN/GaN/AlN HEMTs
  • 5.6 Enhancement-Mode AlN/GaN/AlN MOS-HEMTs with Ultra-Thin 3nm GaN Channels
  • 5.7 Future Directions
  • References
  • 6 Integrated RF Electronics on the AlN Platform
  • 6.1 Introduction
  • 6.2 Survey of GaN-Based CMOS-Logic Realizations
  • 6.3 AlN-Based CMOS Realizations
  • 6.4 In-situ Sublimation Etch of GaN
  • 6.5 Passive RF Devices on AlN Platform
  • 6.5.1 Epitaxial AlN Bulk Acoustic Waveguide Resonators
  • 6.5.2 SiC Substrate Integrated Waveguides (SIW)
  • References
  • 7 Epitaxial Growth of AlN-Based Heterostructures for Electronics
  • 7.1 PA-MBE Growth of GaN/AlN 2DHGs
  • 7.1.1 Detailed Growth Recipe
  • 7.1.2 Variations in the 2DHG Active Region
  • 7.1.3 Growth Condition Optimization Studies
  • Optimizing the GaN/AlN Interface
  • Large Area Growths
  • 7.2 PA-MBE Growth of AlN/GaN/AlN 2DEGs
  • 7.2.1 In-situ Cleaning of 6H-SiC
  • 7.2.2 Detailed Growth Recipe
  • 7.2.3 In-situ AlN passivated AlN/GaN/AlN HEMTs
  • References
  • 8 Electronics on Single-Crystal, Bulk AlN Substrates
  • 8.1 Single-Crystal AlN Substrates for Transistors
  • 8.2 Early Results
  • References
  • A Author's Biographical Sketch

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