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on1379207174 |
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OCoLC |
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20240623213015.0 |
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m o d |
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cr cnu---unuuu |
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230516s2023 sz a ob 001 0 eng d |
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|a GW5XE
|b eng
|e rda
|e pn
|c GW5XE
|d YDX
|d EBLCP
|d UKAHL
|d OCLCF
|d OCLCQ
|d YDX
|d OCLCO
|d OCLCL
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|a 1378708459
|a 1378936111
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|a 9783031290862
|q (electronic bk.)
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|a 3031290860
|q (electronic bk.)
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|z 3031290852
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|z 9783031290855
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| 024 |
7 |
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|a 10.1007/978-3-031-29086-2
|2 doi
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| 035 |
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|a (OCoLC)1379207174
|z (OCoLC)1378708459
|z (OCoLC)1378936111
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| 050 |
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4 |
|a TK7871.95
|b .G56 2023
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| 072 |
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|a TJFC
|2 bicssc
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|a TEC008010
|2 bisacsh
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|a TJFC
|2 thema
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|a HCDD
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| 100 |
1 |
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|a Gimenez, Salvador Pinillos,
|d 1962-
|e author.
|1 https://id.oclc.org/worldcat/entity/E39PCjJqT9QwJxK4Y4v9pxQtTd
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| 245 |
1 |
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|a Differentiated layout styles for MOSFETs :
|b electrical behavior in harsh environments /
|c Salvador Pinillos Gimenez, Egon Henrique Salerno Galembeck.
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| 264 |
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1 |
|a Cham, Switzerland :
|b Springer,
|c 2023.
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| 300 |
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|a 1 online resource (230 pages) :
|b illustrations (black and white, and colour).
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| 336 |
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|a text
|b txt
|2 rdacontent
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| 337 |
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|a computer
|b c
|2 rdamedia
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| 338 |
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|a online resource
|b cr
|2 rdacarrier
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|a Chapter 1. Introduction -- Chapter 2. Basic concepts of the semiconductor physics -- Chapter 3. The electrical characteristics of the semiconductor at high temperatures -- Chapter 4. The MOSFET -- Chapter 5. The First Generation of the Unconventional Layout Styles for MOSFETs -- Chapter 6. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 7. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of MOSFETs -- Chapter 8. The High Temperature Effects in Electrical Parameters of Mosfets and the Results Obtained of the First and Second Generation.
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| 520 |
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|a This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die area. Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs; Describes innovative layout styles for MOSFETs that dont entail an additional cost in manufacturing; Discusses the design of analog and RF MOSFETs that operate effectively in a high-temperature wide range and an ionizing radiation environment.
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| 504 |
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|a Includes bibliographical references and index.
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| 588 |
0 |
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|a Print version record.
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| 650 |
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|a Metal oxide semiconductor field-effect transistors.
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| 650 |
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7 |
|a Metal oxide semiconductor field-effect transistors
|2 fast
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| 700 |
1 |
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|a Galembeck, Egon Henrique Salerno,
|e author.
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| 776 |
0 |
8 |
|i Print version:
|a GIMENEZ, SALVADOR PINILLOS. GALEMBECK, EGON HENRIQUE SALERNO.
|t DIFFERENTIATED LAYOUT STYLES FOR MOSFETS.
|d [Place of publication not identified] : SPRINGER INTERNATIONAL PU, 2023
|z 3031290852
|w (OCoLC)1371140021
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| 856 |
4 |
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|u https://holycross.idm.oclc.org/login?auth=cas&url=https://link.springer.com/10.1007/978-3-031-29086-2
|y Click for online access
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| 903 |
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|a SPRING-ALL2023
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| 994 |
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|a 92
|b HCD
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