Ferroelectric Random Access Memories Fundamentals and Applications / edited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto.

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book...

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Bibliographic Details
Corporate Author: SpringerLink (Online service)
Other Authors: Ishiwara, Hiroshi (Editor), Okuyama, Masanori (Editor), Arimoto, Yoshihiro (Editor)
Format: eBook
Language:English
Published: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2004.
Edition:1st ed. 2004.
Series:Topics in Applied Physics, 93
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