Ferroelectric Random Access Memories Fundamentals and Applications / edited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto.

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book...

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Bibliographic Details
Corporate Author: SpringerLink (Online service)
Other Authors: Ishiwara, Hiroshi (Editor), Okuyama, Masanori (Editor), Arimoto, Yoshihiro (Editor)
Format: eBook
Language:English
Published: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2004.
Edition:1st ed. 2004.
Series:Topics in Applied Physics, 93
Springer eBook Collection.
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Online Access:Click to view e-book
Holy Cross Note:Loaded electronically.
Electronic access restricted to members of the Holy Cross Community.
Description
Summary:In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.
Physical Description:XIII, 291 p. online resource.
ISBN:9783540451631
ISSN:0303-4216 ;
DOI:10.1007/b12953