Ferroelectric Random Access Memories Fundamentals and Applications / edited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto.

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book...

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Bibliographic Details
Corporate Author: SpringerLink (Online service)
Other Authors: Ishiwara, Hiroshi (Editor), Okuyama, Masanori (Editor), Arimoto, Yoshihiro (Editor)
Format: eBook
Language:English
Published: Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2004.
Edition:1st ed. 2004.
Series:Topics in Applied Physics, 93
Springer eBook Collection.
Subjects:
Online Access:Click to view e-book
Holy Cross Note:Loaded electronically.
Electronic access restricted to members of the Holy Cross Community.
Table of Contents:
  • Part I Ferroelectric Thin Films: Overview
  • Novel Si-substituted Ferroelectric Films
  • Static and Dynamic Properties of Domains
  • Nanoscale Phenomena in Ferroelectric Thin Films
  • Part II Deposition and Characterization Methods: Sputtering Techniques
  • Chemical Approach Using Tailored Liquid Sources to Bi-based Layer-structured Perovskite Thin Films
  • Recent Development of Ferroelectric Thin Films by MOCVD
  • Materials Integration Strategies
  • Characterization by Scanning Nonlinear Dielectric Microscopy
  • Part III Fabrication Process and Circuit Design: Current Status of FeRAMs
  • Operation Principle and Circuit Design Issues
  • High Density Integration
  • Testing and Reliability
  • Part IV Advanced-Type Memories: Chain FeRAMs
  • Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell and Application to a Non-volatile SRAM
  • FET-type FeRAMs
  • Part V Applications and Future Prospects: Application to Future Information Technology World
  • Subject Index.