Ferroelectric Random Access Memories Fundamentals and Applications / edited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto.
In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book...
Full description
Saved in: