Plasma Charging Damage

Plasma Charging Damage by Kin P. Cheung.

In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in...

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Bibliographic Details
Main Author: Cheung, Kin P. (Author)
Corporate Author: SpringerLink (Online service)
Format: eBook
Language:English
Published: London : Springer London : Imprint: Springer, 2001.
Edition:1st ed. 2001.
Series:Springer eBook Collection.
Subjects:
Chemical engineering.
Manufactures.
Optical materials.
Electronic materials.
Electronics.
Microelectronics.
Materials—Surfaces.
Thin films.
Electronic resources (E-books)
Online Access:Click to view e-book
Holy Cross Note:Loaded electronically.
Electronic access restricted to members of the Holy Cross Community.
Table of Contents:
  • 1. Thin Gate-oxide Wear-out and Breakdown
  • 1.1 The MOSFET
  • 1.2 Tunneling Phenomena in Thin Oxide
  • 1.3 Thin Oxide Breakdown Measurements
  • 1.4 Gate-oxide Breakdown Models
  • 1.5 Trap Generation Model and Acceleration Factors
  • 1.6 Defects, Traps and Latent Defects
  • References
  • 2. Mechanism of Plasma Charging Damage I
  • 2.1 Basic Plasma Characteristics
  • 2.2 Charge Balance and Plasma Charging
  • 2.3 Charging in the Presence of an Applied Bias
  • 2.4 Fowler-Nordheim (FN) Tunneling and Charge Balance
  • 2.5 Antenna Effect
  • 2.6 Uniformity of Electron Temperature
  • 2.7 Charging Damage by High-density Plasma
  • References
  • 3. Mechanism of Plasma Charging Damage II
  • 3.1 Electron-shading Effect
  • 3.2 AC Charging Effect
  • 3.3 RF Bias Transient Charging Damage
  • References
  • 4. Mechanism of Plasma Charging Damage III
  • 4.1 Plasma Charging Damage from Dielectric Deposition
  • 4.2 Plasma Charging Damage from Magnetized Plasma
  • 4.3 Plasma Charging Damage at the Transistor Channel’s Edge
  • 4.4 Plasma Charging Damage in Very Short Range
  • 4.5 Hidden Antenna Effects
  • References
  • 5. Charging Damage Measurement I ¡ª Determination of Plasma’s Ability to Cause Damage
  • 5.1 Direct Plasma Property Measurement with Langmuir Probe
  • 5.2 Stanford Plasma-On-Wafer Real-Time (SPORT) Probe
  • 5.3 Using MNOS Device to Measure Plasma Charging Voltage
  • 5.4 EEPROM and CHARM®
  • 5.5 Common Problems with Methods that Measure Plasma Properties Directly
  • 5.6 Rapid In-line Charge Sensing Methods
  • References
  • 6. Charging Damage Measurement II ¡ª Direct Measurement of Damage
  • 6.1 Measurement Challenge
  • 6.2 Test Devices
  • 6.3 Breakdown Tests
  • 6.4 Wear-out Tests
  • References
  • 7. Coping with Plasma Charging Damage
  • 7.1 Impact of Plasma Charging Damage on Yield and Reliability
  • 7.2 Fixing the Damaging Process
  • 7.3 Use of Design Rules
  • 7.4 Diode Protection
  • 7.5 Failure Criteria Problem
  • 7.6 Projecting the Yield Impact to Products
  • 7.7 Projecting the Reliability Impact to Products
  • 7.8 Ultra-thin Gate-oxide Issues
  • 7.9 The Damage Measurement Problem for Ultra-thin Gate-oxide
  • References.

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