Nonlinear Design FETs and HEMTs.

Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages an...

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Bibliographic Details
Main Author: Ladbrooke, Peter H.
Format: eBook
Language:English
Published: Norwood : Artech House, 2021.
Subjects:
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